All MOSFET. LXP152ALT1G Datasheet

 

LXP152ALT1G Datasheet and Replacement


   Type Designator: LXP152ALT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-23
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LXP152ALT1G Datasheet (PDF)

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LXP152ALT1G

LESHAN RADIO COMPANY, LTD.Silicon P-Channel MOSFET LXP152ALT1GApplicationsNotebook PCs3Cellular and portable phonesON-board power suppliesLi-ion battery systems1Features 2Low on-state resistance:Rds(on)=0.3 (Vgs=-4.5V)SOT 23 Rds(on)=0.5 (Vgs=-2.5V)Ultra high-speed switching Equivalent circuitGate protect diode built-inDRAINOperational voltage:-

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: QM3008S | AON6992 | SFP080N150C2 | FCPF165N65S3R0L | IXFR32N50Q | NDD60N550U1 | APQ1HSN60AA

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