All MOSFET. LXP152ALT1G Datasheet

 

LXP152ALT1G Datasheet and Replacement


   Type Designator: LXP152ALT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-23
 

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LXP152ALT1G Datasheet (PDF)

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LXP152ALT1G

LESHAN RADIO COMPANY, LTD.Silicon P-Channel MOSFET LXP152ALT1GApplicationsNotebook PCs3Cellular and portable phonesON-board power suppliesLi-ion battery systems1Features 2Low on-state resistance:Rds(on)=0.3 (Vgs=-4.5V)SOT 23 Rds(on)=0.5 (Vgs=-2.5V)Ultra high-speed switching Equivalent circuitGate protect diode built-inDRAINOperational voltage:-

Datasheet: LP4411ET1G , LP9435LT1G , LRK7002WT1G , LS165 , LS166 , LS370 , LS371 , LSI1012XT1G , 2N7002 , NUS5530MNR2G , NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N , NVB5860N .

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