LXP152ALT1G Datasheet. Specs and Replacement

Type Designator: LXP152ALT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT-23

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LXP152ALT1G datasheet

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LXP152ALT1G

LESHAN RADIO COMPANY, LTD. Silicon P-Channel MOSFET LXP152ALT1G Applications Notebook PCs 3 Cellular and portable phones ON-board power supplies Li-ion battery systems 1 Features 2 Low on-state resistance Rds(on)=0.3 (Vgs=-4.5V) SOT 23 Rds(on)=0.5 (Vgs=-2.5V) Ultra high-speed switching Equivalent circuit Gate protect diode built-in DRAIN Operational voltage -... See More ⇒

Detailed specifications: LP4411ET1G, LP9435LT1G, LRK7002WT1G, LS165, LS166, LS370, LS371, LSI1012XT1G, AON7506, NUS5530MNR2G, NVA4001N, NVA4153N, NVA7002NT1G, NVB25P06, NVB5404N, NVB5426N, NVB5860N

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs