All MOSFET. NVA4001N Datasheet

 

NVA4001N Datasheet and Replacement


   Type Designator: NVA4001N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.238 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-416
 

 NVA4001N substitution

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NVA4001N Datasheet (PDF)

 ..1. Size:132K  onsemi
 nta4001n nva4001n.pdf pdf_icon

NVA4001N

NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre

 ..2. Size:128K  onsemi
 nta4001nt1 nva4001n.pdf pdf_icon

NVA4001N

NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre

Datasheet: LRK7002WT1G , LS165 , LS166 , LS370 , LS371 , LSI1012XT1G , LXP152ALT1G , NUS5530MNR2G , IRF1407 , NVA4153N , NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N , NVB5860N , NVB5860NL , NVB60N06 .

History: STV50N06

Keywords - NVA4001N MOSFET datasheet

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