NVA4001N Datasheet. Specs and Replacement

Type Designator: NVA4001N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.238 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-416

NVA4001N substitution

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NVA4001N datasheet

 ..1. Size:132K  onsemi
 nta4001n nva4001n.pdf pdf_icon

NVA4001N

NTA4001N, NVA4001N Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features http //onsemi.com Low Gate Charge for Fast Switching V(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint Typ @ VGS (Note 1) ESD Protected Gate 1.5 W @ 4.5 V 20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N 2.2 W @ 2.5 V These Devices are Pb-Fre... See More ⇒

 ..2. Size:128K  onsemi
 nta4001nt1 nva4001n.pdf pdf_icon

NVA4001N

NTA4001N, NVA4001N Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features http //onsemi.com Low Gate Charge for Fast Switching V(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint Typ @ VGS (Note 1) ESD Protected Gate 1.5 W @ 4.5 V 20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N 2.2 W @ 2.5 V These Devices are Pb-Fre... See More ⇒

Detailed specifications: LRK7002WT1G, LS165, LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, IRFP450, NVA4153N, NVA7002NT1G, NVB25P06, NVB5404N, NVB5426N, NVB5860N, NVB5860NL, NVB60N06

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