NVA7002NT1G Datasheet. Specs and Replacement

Type Designator: NVA7002NT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.154 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: SOT-416

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NVA7002NT1G datasheet

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NVA7002NT1G

NTA7002N, NVA7002N Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 http //onsemi.com Features Low Gate Charge for Fast Switching RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint V(BR)DSS Typ @ VGS (Note 1) 1.4 W @ 4.5 V ESD Protected Gate 30 V 154 mA AEC-Q101 Qualified and PPAP Capable - NVA7002N 2.3 W @ 2.5 V These Devices are Pb-Fre... See More ⇒

Detailed specifications: LS166, LS370, LS371, LSI1012XT1G, LXP152ALT1G, NUS5530MNR2G, NVA4001N, NVA4153N, AO4407, NVB25P06, NVB5404N, NVB5426N, NVB5860N, NVB5860NL, NVB60N06, NVB6410AN, NVB6411AN

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