NVB60N06 Datasheet. Specs and Replacement
Type Designator: NVB60N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 180.7 nS
Cossⓘ - Output Capacitance: 660 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: D2PAK
NVB60N06 substitution
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NVB60N06 datasheet
nvb60n06.pdf
NTB60N06, NVB60N06 Power MOSFET 60 V, 60 A, N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features 60 VOLTS, 60 AMPERES AEC-Q101 Qualified and PPAP Capable - NVB60N06 RDS(on) = 14 mW These Devices are Pb-Free and are RoHS Compliant N-Channel Typical App... See More ⇒
Detailed specifications: NVA4001N, NVA4153N, NVA7002NT1G, NVB25P06, NVB5404N, NVB5426N, NVB5860N, NVB5860NL, 10N65, NVB6410AN, NVB6411AN, NVB6412AN, NVB6413AN, NVD14N03R, NVD20N03L27, NVD3055-094, NVD3055-150
Keywords - NVB60N06 MOSFET specs
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