All MOSFET. NVB60N06 Datasheet

 

NVB60N06 Datasheet and Replacement


   Type Designator: NVB60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 180.7 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: D2PAK
 

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NVB60N06 Datasheet (PDF)

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NVB60N06

NTB60N06, NVB60N06Power MOSFET60 V, 60 A, N-Channel D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeatures60 VOLTS, 60 AMPERES AEC-Q101 Qualified and PPAP Capable - NVB60N06RDS(on) = 14 mW These Devices are Pb-Free and are RoHS CompliantN-ChannelTypical App

Datasheet: NVA4001N , NVA4153N , NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N , NVB5860N , NVB5860NL , STP80NF70 , NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN , NVD14N03R , NVD20N03L27 , NVD3055-094 , NVD3055-150 .

History: GSM8987 | 2SK152 | AOD446 | HGK640N25S | AOD468 | AP15P10GI | FDMS3668S

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