All MOSFET. NVB60N06 Datasheet

 

NVB60N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVB60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 180.7 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: D2PAK

 NVB60N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVB60N06 Datasheet (PDF)

 ..1. Size:155K  onsemi
 nvb60n06.pdf

NVB60N06 NVB60N06

NTB60N06, NVB60N06Power MOSFET60 V, 60 A, N-Channel D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeatures60 VOLTS, 60 AMPERES AEC-Q101 Qualified and PPAP Capable - NVB60N06RDS(on) = 14 mW These Devices are Pb-Free and are RoHS CompliantN-ChannelTypical App

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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