All MOSFET. NVB60N06 Datasheet

 

NVB60N06 Datasheet and Replacement


   Type Designator: NVB60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 180.7 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: D2PAK
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NVB60N06 Datasheet (PDF)

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NVB60N06

NTB60N06, NVB60N06Power MOSFET60 V, 60 A, N-Channel D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeatures60 VOLTS, 60 AMPERES AEC-Q101 Qualified and PPAP Capable - NVB60N06RDS(on) = 14 mW These Devices are Pb-Free and are RoHS CompliantN-ChannelTypical App

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History: AM4825PE | AON6794 | IRFHM792PBF | BUZ84 | AP9561GM | CED05N8 | BL10N70-A

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