NVD14N03R Datasheet. Specs and Replacement

Type Designator: NVD14N03R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: DPAK

NVD14N03R substitution

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NVD14N03R datasheet

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NVD14N03R

NTD14N03R, NVD14N03R Power MOSFET 14 A, 25 V, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss 14 AMPERES, 25 VOLTS Low Gate Charge RDS(on) = 70.4 mW (Typ) Optimized for High Side Switching Requirements in D High-Efficiency DC-DC Converters N... See More ⇒

Detailed specifications: NVB5426N, NVB5860N, NVB5860NL, NVB60N06, NVB6410AN, NVB6411AN, NVB6412AN, NVB6413AN, 18N50, NVD20N03L27, NVD3055-094, NVD3055-150, NVD3055L170, NVD4804N, NVD4805N, NVD4806N, NVD4808N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.