All MOSFET. NVD14N03R Datasheet

 

NVD14N03R Datasheet and Replacement


   Type Designator: NVD14N03R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: DPAK
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NVD14N03R Datasheet (PDF)

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NVD14N03R

NTD14N03R, NVD14N03RPower MOSFET14 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss14 AMPERES, 25 VOLTS Low Gate ChargeRDS(on) = 70.4 mW (Typ) Optimized for High Side Switching Requirements inDHigh-Efficiency DC-DC Converters N

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History: TK20S04K3L | HLML6401 | MCQ15N10Y | IRLR8726 | NTMSD3P102R2 | FP8V50 | AP85T03GH-HF

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