NVD14N03R Datasheet and Replacement
Type Designator: NVD14N03R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 62 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: DPAK
NVD14N03R substitution
NVD14N03R Datasheet (PDF)
nvd14n03r.pdf
NTD14N03R, NVD14N03RPower MOSFET14 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss14 AMPERES, 25 VOLTS Low Gate ChargeRDS(on) = 70.4 mW (Typ) Optimized for High Side Switching Requirements inDHigh-Efficiency DC-DC Converters N
Datasheet: NVB5426N , NVB5860N , NVB5860NL , NVB60N06 , NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN , RU6888R , NVD20N03L27 , NVD3055-094 , NVD3055-150 , NVD3055L170 , NVD4804N , NVD4805N , NVD4806N , NVD4808N .
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