NVD20N03L27 Datasheet. Specs and Replacement

Type Designator: NVD20N03L27  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 137 nS

Cossⓘ - Output Capacitance: 271 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: DPAK

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NVD20N03L27 datasheet

 ..1. Size:95K  onsemi
 ntd20n03l27 nvd20n03l27.pdf pdf_icon

NVD20N03L27

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin... See More ⇒

 ..2. Size:91K  onsemi
 nvd20n03l27.pdf pdf_icon

NVD20N03L27

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin... See More ⇒

Detailed specifications: NVB5860N, NVB5860NL, NVB60N06, NVB6410AN, NVB6411AN, NVB6412AN, NVB6413AN, NVD14N03R, IRF1405, NVD3055-094, NVD3055-150, NVD3055L170, NVD4804N, NVD4805N, NVD4806N, NVD4808N, NVD4809N

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