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NVD20N03L27 PDF Specs and Replacement


   Type Designator: NVD20N03L27
   Marking Code: 20N3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   Qg ⓘ - Total Gate Charge: 13.8 nC
   tr ⓘ - Rise Time: 137 nS
   Cossⓘ - Output Capacitance: 271 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: DPAK
 

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NVD20N03L27 PDF Specs

 ..1. Size:95K  onsemi
ntd20n03l27 nvd20n03l27.pdf pdf_icon

NVD20N03L27

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin... See More ⇒

 ..2. Size:91K  onsemi
nvd20n03l27.pdf pdf_icon

NVD20N03L27

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin... See More ⇒

Detailed specifications: NVB5860N , NVB5860NL , NVB60N06 , NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN , NVD14N03R , 20N50 , NVD3055-094 , NVD3055-150 , NVD3055L170 , NVD4804N , NVD4805N , NVD4806N , NVD4808N , NVD4809N .

Keywords - NVD20N03L27 MOSFET specs

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