All MOSFET. PHB9N60E Datasheet

 

 

PHB9N60E Datasheet and Replacement


   Type Designator: PHB9N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: SOT404
 

 PHB9N60E substitution

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PHB9N60E Datasheet (PDF)

 ..1. Size:102K  philips
 phb9n60e phw9n60e 3.pdf pdf_icon

PHB9N60E

Philips Semiconductors Product specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 Ag Low thermal resistanceRDS(ON) 0.8 sGENERAL DESCRIPTIONN-channel, enh

 9.1. Size:115K  philips
 phb9nq20t phd9nq20t php9nq20t 2.pdf pdf_icon

PHB9N60E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using

Datasheet: PHB6N50E , PHB6N60E , PHB6ND50E , PHB7N60E , PHB80N06LT , PHB87N03LT , PHB8N50E , PHB8ND50E , IRFB3607 , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT , PHD50N03LT .

History: HTD090N03 | HTD150P06 | HTD160P04 | HTD200P03 | HTD140N03

Keywords - PHB9N60E MOSFET datasheet

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