PHB9N60E Specs and Replacement

Type Designator: PHB9N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SOT404

PHB9N60E substitution

- MOSFET ⓘ Cross-Reference Search

 

PHB9N60E datasheet

 ..1. Size:102K  philips
 phb9n60e phw9n60e 3.pdf pdf_icon

PHB9N60E

Philips Semiconductors Product specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 A g Low thermal resistance RDS(ON) 0.8 s GENERAL DESCRIPTION N-channel, enh... See More ⇒

 9.1. Size:115K  philips
 phb9nq20t phd9nq20t php9nq20t 2.pdf pdf_icon

PHB9N60E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using... See More ⇒

Detailed specifications: PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E, PHB80N06LT, PHB87N03LT, PHB8N50E, PHB8ND50E, IRFB3607, PHD10N10E, PHD12N10E, PHD2N50E, PHD2N60E, PHD3055E, PHD3N40E, PHD45N03LT, PHD50N03LT

Keywords - PHB9N60E MOSFET specs

 PHB9N60E cross reference

 PHB9N60E equivalent finder

 PHB9N60E pdf lookup

 PHB9N60E substitution

 PHB9N60E replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.