All MOSFET. NVD4C05N Datasheet

 

NVD4C05N Datasheet and Replacement


   Type Designator: NVD4C05N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: DPAK
 

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NVD4C05N Datasheet (PDF)

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NVD4C05N

NVD4C05NProduct PreviewPower MOSFET30 V, 4.1 mW, 90 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.1 mW @ 10 V30 V 90 ACompliant6.0 mW @ 4.5 VMAXIMUM R

 0.1. Size:262K  inchange semiconductor
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NVD4C05N

Isc N-Channel MOSFET Transistor NVD4C05NT4GFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: NVD4804N , NVD4805N , NVD4806N , NVD4808N , NVD4809N , NVD4810N , NVD4813NH , NVD4856N , NCEP15T14 , NVD5117PL , NVD5414N , NVD5484NL , NVD5490NL , NVD5802N , NVD5805N , NVD5806N , NVD5807N .

History: KDS3512

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