NVD4C05N Datasheet. Specs and Replacement

Type Designator: NVD4C05N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 107 nS

Cossⓘ - Output Capacitance: 725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: DPAK

NVD4C05N substitution

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NVD4C05N datasheet

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NVD4C05N

NVD4C05N Product Preview Power MOSFET 30 V, 4.1 mW, 90 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.1 mW @ 10 V 30 V 90 A Compliant 6.0 mW @ 4.5 V MAXIMUM R... See More ⇒

 0.1. Size:262K  inchange semiconductor
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NVD4C05N

Isc N-Channel MOSFET Transistor NVD4C05NT4G FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

Detailed specifications: NVD4804N, NVD4805N, NVD4806N, NVD4808N, NVD4809N, NVD4810N, NVD4813NH, NVD4856N, IRF1405, NVD5117PL, NVD5414N, NVD5484NL, NVD5490NL, NVD5802N, NVD5805N, NVD5806N, NVD5807N

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