All MOSFET. NVD5117PL Datasheet

 

NVD5117PL Datasheet and Replacement


   Type Designator: NVD5117PL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DPAK
 

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NVD5117PL Datasheet (PDF)

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NVD5117PL

NVD5117PLPower MOSFET-60 V, 16 mW, -61 A, Single P-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant16 mW @ -10 V-60 V -61 AMAXIMUM RATINGS (TJ = 25C unless otherwise

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NVD5117PL

isc P-Channel MOSFET Transistor NVD5117PLFEATURESDrain Current : I = -61A@ T =25D CDrain Source Voltage: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: NVD4805N , NVD4806N , NVD4808N , NVD4809N , NVD4810N , NVD4813NH , NVD4856N , NVD4C05N , MMIS60R580P , NVD5414N , NVD5484NL , NVD5490NL , NVD5802N , NVD5805N , NVD5806N , NVD5807N , NVD5890NL .

History: S-LBSS123LT1G

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