NVD5117PL Datasheet. Specs and Replacement

Type Designator: NVD5117PL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 118 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 195 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DPAK

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NVD5117PL datasheet

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NVD5117PL

NVD5117PL Power MOSFET -60 V, 16 mW, -61 A, Single P-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 16 mW @ -10 V -60 V -61 A MAXIMUM RATINGS (TJ = 25 C unless otherwise ... See More ⇒

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NVD5117PL

isc P-Channel MOSFET Transistor NVD5117PL FEATURES Drain Current I = -61A@ T =25 D C Drain Source Voltage V = -60V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

Detailed specifications: NVD4805N, NVD4806N, NVD4808N, NVD4809N, NVD4810N, NVD4813NH, NVD4856N, NVD4C05N, 7N60, NVD5414N, NVD5484NL, NVD5490NL, NVD5802N, NVD5805N, NVD5806N, NVD5807N, NVD5890NL

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