All MOSFET. NVD5117PL Datasheet

 

NVD5117PL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVD5117PL
   Marking Code: 5117L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DPAK

 NVD5117PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVD5117PL Datasheet (PDF)

 ..1. Size:136K  onsemi
 nvd5117pl.pdf

NVD5117PL NVD5117PL

NVD5117PLPower MOSFET-60 V, 16 mW, -61 A, Single P-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant16 mW @ -10 V-60 V -61 AMAXIMUM RATINGS (TJ = 25C unless otherwise

 ..2. Size:286K  inchange semiconductor
 nvd5117pl.pdf

NVD5117PL NVD5117PL

isc P-Channel MOSFET Transistor NVD5117PLFEATURESDrain Current : I = -61A@ T =25D CDrain Source Voltage: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FCP650N80Z

 

 
Back to Top