NVDD5894NL Datasheet and Replacement
Type Designator: NVDD5894NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 64 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 30.2 nS
Cossⓘ - Output Capacitance: 259 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DPAK-5
- MOSFET Cross-Reference Search
NVDD5894NL Datasheet (PDF)
nvdd5894nl.pdf

NVDD5894NLPower MOSFET40 V, 10 mW, 64 A, Dual N-ChannelDPAK-5LFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com High Current Capability Avalanche Energy SpecifiedV(BR)DSS RDS(on) Max ID Max AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 10 mW @ 10 V40 V 64 ACompliant14.5 mW @ 4.5 VM
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT
Keywords - NVDD5894NL MOSFET datasheet
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History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT



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