NVE4153N MOSFET. Datasheet pdf. Equivalent
Type Designator: NVE4153N
Marking Code: VP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 6 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.1 V
Maximum Drain Current |Id|: 0.915 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 1.82 nC
Rise Time (tr): 4.4 nS
Drain-Source Capacitance (Cd): 16 pF
Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm
Package: SC-89
NVE4153N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVE4153N Datasheet (PDF)
1.1. nva4153n nve4153n.pdf 
Size:67K _update_mosfet
NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 http://onsemi.com Features • Low RDS(on) Improving System Efficiency V(BR)DSS RDS(on) TYP ID MAX • Low Threshold Voltage, 1.5 V Rated 0.127 W @ 4.5 V • ESD Protected Gate 0.170 W @ 2.5 V 20 V 915 mA • NV Prefix for Automotive and Other Application
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
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