All MOSFET. NVE4153N Datasheet

 

NVE4153N MOSFET. Datasheet pdf. Equivalent

Type Designator: NVE4153N

Marking Code: VP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.1 V

Maximum Drain Current |Id|: 0.915 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.82 nC

Rise Time (tr): 4.4 nS

Drain-Source Capacitance (Cd): 16 pF

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: SC-89

NVE4153N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVE4153N Datasheet (PDF)

1.1. nva4153n nve4153n.pdf Size:67K _update_mosfet

NVE4153N NVE4153N

NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 http://onsemi.com Features • Low RDS(on) Improving System Efficiency V(BR)DSS RDS(on) TYP ID MAX • Low Threshold Voltage, 1.5 V Rated 0.127 W @ 4.5 V • ESD Protected Gate 0.170 W @ 2.5 V 20 V 915 mA • NV Prefix for Automotive and Other Application

1.2. nva4153n nve4153n.pdf Size:67K _onsemi

NVE4153N NVE4153N

NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 http://onsemi.com Features • Low RDS(on) Improving System Efficiency V(BR)DSS RDS(on) TYP ID MAX • Low Threshold Voltage, 1.5 V Rated 0.127 W @ 4.5 V • ESD Protected Gate 0.170 W @ 2.5 V 20 V 915 mA • NV Prefix for Automotive and Other Application

 

Datasheet: NVD6415AN , NVD6416AN , NVD6416ANL , NVD6495NL , NVD6820NL , NVD6824NL , NVD6828NL , NVDD5894NL , IRFZ44N , NVF2201N , NVF2955 , NVF3055-100 , NVF3055L108 , NVF5P03 , NVF6P02 , NVGS3130N , NVGS3136P .

 

 
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