All MOSFET. NVF5P03 Datasheet

 

NVF5P03 MOSFET. Datasheet pdf. Equivalent

Type Designator: NVF5P03

Marking Code: 5P03

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 3.13 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 5.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 153 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SOT-223

NVF5P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVF5P03 Datasheet (PDF)

1.1. nvf5p03.pdf Size:103K _update_mosfet

NVF5P03
NVF5P03

NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P-Channel SOT-223 http://onsemi.com Features • Ultra Low RDS(on) -5.2 AMPERES, -30 VOLTS • Higher Efficiency Extending Battery Life RDS(on) = 100 mW • Logic Level Gate Drive • Miniature SOT-223 Surface Mount Package • Avalanche Energy Specified S • AEC-Q101 Qualified and PPAP Capable - NVF5P03T3G • These Devices are Pb-Free

1.2. ntf5p03 nvf5p03.pdf Size:103K _onsemi

NVF5P03
NVF5P03

NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P-Channel SOT-223 http://onsemi.com Features • Ultra Low RDS(on) -5.2 AMPERES, -30 VOLTS • Higher Efficiency Extending Battery Life RDS(on) = 100 mW • Logic Level Gate Drive • Miniature SOT-223 Surface Mount Package • Avalanche Energy Specified S • AEC-Q101 Qualified and PPAP Capable - NVF5P03T3G • These Devices are Pb-Free

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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