All MOSFET. NVF6P02 Datasheet

 

NVF6P02 MOSFET. Datasheet pdf. Equivalent

Type Designator: NVF6P02

Marking Code: 6P02

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 8.3 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: SOT-223

NVF6P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVF6P02 Datasheet (PDF)

1.1. nvf6p02.pdf Size:102K _update_mosfet

NVF6P02
NVF6P02

NTF6P02, NVF6P02 Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 http://onsemi.com Features • Low RDS(on) -10 AMPERES • Logic Level Gate Drive -20 VOLTS • Diode Exhibits High Speed, Soft Recovery RDS(on) = 44 mW (Typ.) • Avalanche Energy Specified • NVF Prefix for Automotive and Other Applications Requiring S Unique Site and Control Change Requirements; AEC-Q101 Qua

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top