NVF6P02 MOSFET. Datasheet pdf. Equivalent
Type Designator: NVF6P02
Marking Code: 6P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 8.3 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SOT-223
NVF6P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVF6P02 Datasheet (PDF)
1.1. nvf6p02.pdf 
Size:102K _update_mosfet
NTF6P02, NVF6P02 Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 http://onsemi.com Features • Low RDS(on) -10 AMPERES • Logic Level Gate Drive -20 VOLTS • Diode Exhibits High Speed, Soft Recovery RDS(on) = 44 mW (Typ.) • Avalanche Energy Specified • NVF Prefix for Automotive and Other Applications Requiring S Unique Site and Control Change Requirements; AEC-Q101 Qua
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