NVF6P02 Datasheet and Replacement
Type Designator: NVF6P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 8.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-223
NVF6P02 substitution
NVF6P02 Datasheet (PDF)
nvf6p02.pdf

NTF6P02, NVF6P02Power MOSFET-10 Amps, -20 VoltsP-Channel SOT-223http://onsemi.comFeatures Low RDS(on)-10 AMPERES Logic Level Gate Drive-20 VOLTS Diode Exhibits High Speed, Soft RecoveryRDS(on) = 44 mW (Typ.) Avalanche Energy Specified NVF Prefix for Automotive and Other Applications RequiringSUnique Site and Control Change Requirements; AEC-Q101Qua
ntf6p02 nvf6p02.pdf

NTF6P02, NVF6P02MOSFET Power,P-Channel, SOT-223-10 A, -20 VFeatureswww.onsemi.com Low RDS(on)-10 AMPERES Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery -20 VOLTS Avalanche Energy SpecifiedRDS(on) = 44 mW (Typ.) NVF Prefix for Automotive and Other Applications RequiringSUnique Site and Control Change Requirements; AEC-Q101Qualifie
Datasheet: NVD6828NL , NVDD5894NL , NVE4153N , NVF2201N , NVF2955 , NVF3055-100 , NVF3055L108 , NVF5P03 , 50N06 , NVGS3130N , NVGS3136P , NVGS3441 , NVGS3443 , NVGS4111P , NVGS4141N , NVGS5120P , NVJD4152P .
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