PHD2N50E Specs and Replacement
Type Designator: PHD2N50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT428
PHD2N50E substitution
- MOSFET ⓘ Cross-Reference Search
PHD2N50E datasheet
php2n50e phb2n50e phd2n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) 5 s GENERAL DESCRIPTION N-channe... See More ⇒
php2n60e phb2n60e phd2n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) 6 s GENERAL DESCRIPTION N-chan... See More ⇒
Detailed specifications: PHB7N60E, PHB80N06LT, PHB87N03LT, PHB8N50E, PHB8ND50E, PHB9N60E, PHD10N10E, PHD12N10E, CS150N03A8, PHD2N60E, PHD3055E, PHD3N40E, PHD45N03LT, PHD50N03LT, PHD55N03LT, PHD69N03LT, PHD6N10E
Keywords - PHD2N50E MOSFET specs
PHD2N50E cross reference
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PHD2N50E replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
