All MOSFET. NVGS4111P Datasheet

 

NVGS4111P MOSFET. Datasheet pdf. Equivalent

Type Designator: NVGS4111P

Marking Code: VTG

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 3.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15.25 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SC-88

NVGS4111P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVGS4111P Datasheet (PDF)

1.1. nvgs4111p.pdf Size:113K _update_mosfet

NVGS4111P
NVGS4111P

NTGS4111P, NVGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features • Leading -30 V Trench Process for Low RDS(on) • Low Profile Package Suitable for Portable Applications http://onsemi.com • Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX • Improved Efficiency for Battery Applications • NV Prefix for Automotive and Other Applications

4.1. nvgs4141n.pdf Size:113K _update_mosfet

NVGS4111P
NVGS4111P

NTGS4141N, NVGS4141N Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6 Features • Low RDS(on) • Low Gate Charge • NV Prefix for Automotive and Other Applications Requiring Unique http://onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) TYP ID MAX • Pb-Free Package is Available 21.5 mW @ 10 V Applications 30 V 7.0 A 30 mW

 

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