NVJD5121N Datasheet. Specs and Replacement

Type Designator: NVJD5121N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.295 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 4.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: SOT-363

NVJD5121N substitution

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NVJD5121N datasheet

 ..1. Size:69K  onsemi
 ntjd5121n nvjd5121n.pdf pdf_icon

NVJD5121N

NTJD5121N, NVJD5121N Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 Features Low RDS(on) www.onsemi.com www.onsemi.com Low Gate Threshold Low Input Capacitance V(BR)DSS RDS(on) MAX ID Max ESD Protected Gate 1.6 W @ 10 V 295 mA NV Prefix for Automotive and Other Applications Requiring Unique 60 V 2.5 W @ 4.5 V Site and Control Change Requ... See More ⇒

 ..2. Size:64K  onsemi
 nvjd5121n.pdf pdf_icon

NVJD5121N

NTJD5121N, NVJD5121N Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 Features Low RDS(on) www.onsemi.com www.onsemi.com Low Gate Threshold Low Input Capacitance V(BR)DSS RDS(on) MAX ID Max ESD Protected Gate 1.6 W @ 10 V 295 mA NV Prefix for Automotive and Other Applications Requiring Unique 60 V 2.5 W @ 4.5 V Site and Control Change Requ... See More ⇒

Detailed specifications: NVGS3441, NVGS3443, NVGS4111P, NVGS4141N, NVGS5120P, NVJD4152P, NVJD4158C, NVJD4401N, IRF3710, NVJS3151P, NVJS4151P, NVJS4405N, NVLJD4007NZ, NVLUS4C12N, NVMD3P03, NVMD4N03, NVMD6N03R2G

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