All MOSFET. NVJD5121N Datasheet

 

NVJD5121N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVJD5121N
   Marking Code: VTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.295 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.9 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 4.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SOT-363

 NVJD5121N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVJD5121N Datasheet (PDF)

 ..1. Size:69K  onsemi
 ntjd5121n nvjd5121n.pdf

NVJD5121N NVJD5121N

NTJD5121N, NVJD5121NPower MOSFET60 V, 295 mA, Dual N-Channel with ESDProtection, SC-88Features Low RDS(on)www.onsemi.comwww.onsemi.com Low Gate Threshold Low Input CapacitanceV(BR)DSS RDS(on) MAX ID Max ESD Protected Gate1.6 W @ 10 V295 mA NV Prefix for Automotive and Other Applications Requiring Unique 60 V2.5 W @ 4.5 VSite and Control Change Requ

 ..2. Size:64K  onsemi
 nvjd5121n.pdf

NVJD5121N NVJD5121N

NTJD5121N, NVJD5121NPower MOSFET60 V, 295 mA, Dual N-Channel with ESDProtection, SC-88Features Low RDS(on)www.onsemi.comwww.onsemi.com Low Gate Threshold Low Input CapacitanceV(BR)DSS RDS(on) MAX ID Max ESD Protected Gate1.6 W @ 10 V295 mA NV Prefix for Automotive and Other Applications Requiring Unique 60 V2.5 W @ 4.5 VSite and Control Change Requ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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