All MOSFET. NVJS3151P Datasheet

 

NVJS3151P MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVJS3151P
   Marking Code: VTJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.6 nC
   trⓘ - Rise Time: 1.5 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-363

 NVJS3151P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVJS3151P Datasheet (PDF)

 ..1. Size:64K  onsemi
 nvjs3151p.pdf

NVJS3151P NVJS3151P

NTJS3151P, NVJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique

 ..2. Size:67K  onsemi
 ntjs3151p nvjs3151p.pdf

NVJS3151P NVJS3151P

NTJS3151P, NVJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique

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History: IRLU3410P

 

 
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