NVJS3151P Datasheet and Replacement
Type Designator: NVJS3151P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-363
NVJS3151P substitution
NVJS3151P Datasheet (PDF)
nvjs3151p.pdf
NTJS3151P, NVJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique
ntjs3151p nvjs3151p.pdf
NTJS3151P, NVJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique
Datasheet: NVGS3443 , NVGS4111P , NVGS4141N , NVGS5120P , NVJD4152P , NVJD4158C , NVJD4401N , NVJD5121N , 7N65 , NVJS4151P , NVJS4405N , NVLJD4007NZ , NVLUS4C12N , NVMD3P03 , NVMD4N03 , NVMD6N03R2G , NVMD6N04 .
History: NVMD3P03
Keywords - NVJS3151P MOSFET datasheet
NVJS3151P cross reference
NVJS3151P equivalent finder
NVJS3151P lookup
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History: NVMD3P03
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