All MOSFET. NVLJD4007NZ Datasheet

 

NVLJD4007NZ Datasheet and Replacement


   Type Designator: NVLJD4007NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.755 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.245 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: WDFN6
 

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NVLJD4007NZ Datasheet (PDF)

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NVLJD4007NZ

NVLJD4007NZSmall Signal MOSFET30 V, 245 mA, Dual, N-Channel, Gate ESDProtection, 2x2 WDFN Packagehttp://onsemi.comFeatures Optimized Layout for Excellent High Speed Signal IntegrityRDS(on) ID MAX Low Gate Charge for Fast Switching V(BR)DSS Typ @ VGS (Note 1)1.4 W @ 4.5 V Small 2 x 2 mm Footprint30 V 245 mA ESD Protected Gate2.3 W @ 2.5 V AEC-Q101 Quali

Datasheet: NVGS5120P , NVJD4152P , NVJD4158C , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , IRFP250N , NVLUS4C12N , NVMD3P03 , NVMD4N03 , NVMD6N03R2G , NVMD6N04 , NVMFD5483NL , NVMFD5485NL , NVMFD5489NL .

History: NVMD3P03

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