All MOSFET. NVLJD4007NZ Datasheet

 

NVLJD4007NZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVLJD4007NZ
   Marking Code: JG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.755 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.245 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.75 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: WDFN6

 NVLJD4007NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVLJD4007NZ Datasheet (PDF)

 ..1. Size:122K  onsemi
 nvljd4007nz.pdf

NVLJD4007NZ NVLJD4007NZ

NVLJD4007NZSmall Signal MOSFET30 V, 245 mA, Dual, N-Channel, Gate ESDProtection, 2x2 WDFN Packagehttp://onsemi.comFeatures Optimized Layout for Excellent High Speed Signal IntegrityRDS(on) ID MAX Low Gate Charge for Fast Switching V(BR)DSS Typ @ VGS (Note 1)1.4 W @ 4.5 V Small 2 x 2 mm Footprint30 V 245 mA ESD Protected Gate2.3 W @ 2.5 V AEC-Q101 Quali

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI5513CDC | GSM6561 | FDD3672F085

 

 
Back to Top