NVLJD4007NZ Datasheet. Specs and Replacement

Type Designator: NVLJD4007NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.755 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.245 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: WDFN6

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NVLJD4007NZ datasheet

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NVLJD4007NZ

NVLJD4007NZ Small Signal MOSFET 30 V, 245 mA, Dual, N-Channel, Gate ESD Protection, 2x2 WDFN Package http //onsemi.com Features Optimized Layout for Excellent High Speed Signal Integrity RDS(on) ID MAX Low Gate Charge for Fast Switching V(BR)DSS Typ @ VGS (Note 1) 1.4 W @ 4.5 V Small 2 x 2 mm Footprint 30 V 245 mA ESD Protected Gate 2.3 W @ 2.5 V AEC-Q101 Quali... See More ⇒

Detailed specifications: NVGS5120P, NVJD4152P, NVJD4158C, NVJD4401N, NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N, 2N7000, NVLUS4C12N, NVMD3P03, NVMD4N03, NVMD6N03R2G, NVMD6N04, NVMFD5483NL, NVMFD5485NL, NVMFD5489NL

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