NVR4003N Datasheet. Specs and Replacement

Type Designator: NVR4003N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47.9 nS

Cossⓘ - Output Capacitance: 19.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT-23

NVR4003N substitution

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NVR4003N datasheet

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NVR4003N

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching www.onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance V(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V 1.0 W @ 4.0 V ... See More ⇒

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NVR4003N

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching www.onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance V(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V 1.0 W @ 4.0 V ... See More ⇒

Detailed specifications: NVMFS5C442NL, NVMFS5C604NL, NVMFS5C612NL, NVMFS5C646NL, NVMFS5C670NL, NVMS5P02, NVMS5P02R2G, NVR1P02, BS170, NVR4501N, NVR5198NL, NVS4001N, NVS4409N, NVTA7002N, NVTFS4C05N, NVTFS4C06N, NVTFS4C08N

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