PHD55N03LT Specs and Replacement
Type Designator: PHD55N03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOT428
PHD55N03LT substitution
- MOSFET ⓘ Cross-Reference Search
PHD55N03LT datasheet
phb55n03lt phd55n03lt php55n03lt 6.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 55 A Low thermal resistance Logic level compatible RDS(ON) 14 m (VGS = 10 V) g RDS(ON) 18 m (VGS... See More ⇒
php55n03lta phb55n03lta phd55n03lta.pdf
PHP55N03LTA;PHB55N03LTA; PHD55N03LTA N-channel enhancement mode field-effect transistor Rev. 02 2 August 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). 2. Features Low... See More ⇒
phd55n03.pdf
Isc N-Channel MOSFET Transistor PHD55N03 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
Detailed specifications: PHD10N10E, PHD12N10E, PHD2N50E, PHD2N60E, PHD3055E, PHD3N40E, PHD45N03LT, PHD50N03LT, AO4407, PHD69N03LT, PHD6N10E, PHP10N10E, PHP10N60E, PHP11N50E, PHP125N06LT, PHP12N10E, PHP130N03LT
Keywords - PHD55N03LT MOSFET specs
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