Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 55 A Low thermal resistance Logic level compatible RDS(ON) 14 m (VGS = 10 V)gRDS(ON) 18 m (VGS

PHP55N03LTA;PHB55N03LTA;PHD55N03LTAN-channel enhancement mode field-effect transistorRev. 02 2 August 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP55N03LTA in a SOT78 (TO-220AB)PHB55N03LTA in a SOT404 (D2-PAK)PHD55N03LTA in a SOT428 (D-PAK).2. Features Low

Isc N-Channel MOSFET Transistor PHD55N03FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta