NX1029X Datasheet. Specs and Replacement

Type Designator: NX1029X  📄📄 

Marking Code: AD

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V

Qg ⓘ - Total Gate Charge: 0.26 nC

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 4.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: SOT666

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NX1029X datasheet

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NX1029X

NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatibl... See More ⇒

Detailed specifications: NVTFS4C13N, NVTFS4C25N, NVTFS5124PL, NVTJD4001N, NVTR01P02L, NVTR0202PL, NVTR4502P, NVTR4503N, P60NF06, NX2020N2, NX2020P1, NX3020NAK, NX7002AK, NX7002AKS, NX7002AKW, NX7002BK, NX7002BKM

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.