All MOSFET. NX1029X Datasheet

 

NX1029X Datasheet and Replacement


   Type Designator: NX1029X
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 4.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SOT666
 

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NX1029X Datasheet (PDF)

 ..1. Size:396K  nxp
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NX1029X

NX1029X60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFETRev. 1 12 August 2011 Product data sheet1. Product profile1.1 General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatibl

Datasheet: NVTFS4C13N , NVTFS4C25N , NVTFS5124PL , NVTJD4001N , NVTR01P02L , NVTR0202PL , NVTR4502P , NVTR4503N , AO3401 , NX2020N2 , NX2020P1 , NX3020NAK , NX7002AK , NX7002AKS , NX7002AKW , NX7002BK , NX7002BKM .

History: AM3925P | 2SK888 | BUZ83 | SFF240J | AM20P04-60D | 2SJ605-Z | WMN30N80M3

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