All MOSFET. NX2020P1 Datasheet

 

NX2020P1 Datasheet and Replacement


   Type Designator: NX2020P1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: DFN2020MD-6
 

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NX2020P1 Datasheet (PDF)

 ..1. Size:265K  nxp
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NX2020P1

NX2020P130 V, single P-channel Trench MOSFET22 January 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic p

 8.1. Size:273K  nxp
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NX2020P1

NX2020N230 V, N-channel Trench MOSFET20 January 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra

Datasheet: NVTFS5124PL , NVTJD4001N , NVTR01P02L , NVTR0202PL , NVTR4502P , NVTR4503N , NX1029X , NX2020N2 , RU6888R , NX3020NAK , NX7002AK , NX7002AKS , NX7002AKW , NX7002BK , NX7002BKM , NX7002BKMB , NX7002BKS .

History: IPB60R250CP | RUF025N02 | VBM1680 | CS6N70F | STN3414 | YJG90G10A | BUK9K18-40E

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