NX2020P1 Datasheet. Specs and Replacement

Type Designator: NX2020P1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: DFN2020MD-6

NX2020P1 substitution

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NX2020P1 datasheet

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NX2020P1

NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic p... See More ⇒

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NX2020P1

NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra ... See More ⇒

Detailed specifications: NVTFS5124PL, NVTJD4001N, NVTR01P02L, NVTR0202PL, NVTR4502P, NVTR4503N, NX1029X, NX2020N2, AO3400A, NX3020NAK, NX7002AK, NX7002AKS, NX7002AKW, NX7002BK, NX7002BKM, NX7002BKMB, NX7002BKS

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