All MOSFET. PHD69N03LT Datasheet

 

PHD69N03LT Datasheet and Replacement


   Type Designator: PHD69N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOT428
 

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PHD69N03LT Datasheet (PDF)

 ..1. Size:111K  philips
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PHD69N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) 12 m (VGS = 10 V)gRDS(ON) 14 m (VGS

Datasheet: PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT , PHD50N03LT , PHD55N03LT , 18N50 , PHD6N10E , PHP10N10E , PHP10N60E , PHP11N50E , PHP125N06LT , PHP12N10E , PHP130N03LT , PHP18N20E .

History: SDF9N100GAF-S | IRLI510A | SVSP80R180FJDE3

Keywords - PHD69N03LT MOSFET datasheet

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