PHD69N03LT Specs and Replacement

Type Designator: PHD69N03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT428

PHD69N03LT substitution

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PHD69N03LT datasheet

 ..1. Size:111K  philips
 phb69n03lt phd69n03lt php69n03lt 7.pdf pdf_icon

PHD69N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP69N03LT, PHB69N03LT Logic level FET PHD69N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 69 A Low thermal resistance Logic level compatible RDS(ON) 12 m (VGS = 10 V) g RDS(ON) 14 m (VGS... See More ⇒

Detailed specifications: PHD12N10E, PHD2N50E, PHD2N60E, PHD3055E, PHD3N40E, PHD45N03LT, PHD50N03LT, PHD55N03LT, BS170, PHD6N10E, PHP10N10E, PHP10N60E, PHP11N50E, PHP125N06LT, PHP12N10E, PHP130N03LT, PHP18N20E

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