PHD6N10E Specs and Replacement

Type Designator: PHD6N10E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 6.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: SOT428

PHD6N10E substitution

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PHD6N10E datasheet

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 phd6n10e 1.pdf pdf_icon

PHD6N10E

Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting featuring high avalanche ID Drain current (DC) 6.3 A energy capability, stable blocking Ptot Total power d... See More ⇒

Detailed specifications: PHD2N50E, PHD2N60E, PHD3055E, PHD3N40E, PHD45N03LT, PHD50N03LT, PHD55N03LT, PHD69N03LT, 4N60, PHP10N10E, PHP10N60E, PHP11N50E, PHP125N06LT, PHP12N10E, PHP130N03LT, PHP18N20E, PHP21N06LT

Keywords - PHD6N10E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.