All MOSFET. PHD6N10E Datasheet

 

PHD6N10E Datasheet and Replacement


   Type Designator: PHD6N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 6.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: SOT428
 

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PHD6N10E Datasheet (PDF)

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PHD6N10E

Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting featuring high avalanche ID Drain current (DC) 6.3 Aenergy capability, stable blocking Ptot Total power d

Datasheet: PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT , PHD50N03LT , PHD55N03LT , PHD69N03LT , 10N65 , PHP10N10E , PHP10N60E , PHP11N50E , PHP125N06LT , PHP12N10E , PHP130N03LT , PHP18N20E , PHP21N06LT .

History: IRFB3710 | BSC097N06NST

Keywords - PHD6N10E MOSFET datasheet

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