PHD6N10E Datasheet and Replacement
Type Designator: PHD6N10E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id|ⓘ - Maximum Drain Current: 6.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: SOT428
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PHD6N10E Datasheet (PDF)
phd6n10e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting featuring high avalanche ID Drain current (DC) 6.3 Aenergy capability, stable blocking Ptot Total power d
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PHP50N03LT | ME8205B-G | IXFM12N100 | WST2315 | DAMI320N100 | TPC6011 | APT8075BVR
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History: PHP50N03LT | ME8205B-G | IXFM12N100 | WST2315 | DAMI320N100 | TPC6011 | APT8075BVR
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