OM60N10SC MOSFET Datasheet: P-Ch, 100V, 60A. Full specification with pinout and replacement list

OM60N10SC Specs and Replacement

   Type Designator: OM60N10SC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-258AA

OM60N10SC substitution

- MOSFET ⓘ Cross-Reference Search

OM60N10SC datasheet

..1. Size:56K omnirel
om60n10sc.pdf pdf_icon

OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And... See More ⇒

9.1. Size:61K omnirel
om60n06sa.pdf pdf_icon

OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ce... See More ⇒

Detailed specifications: NX7002BK , NX7002BKM , NX7002BKMB , NX7002BKS , NX7002BKW , NX7002BKXB , OM6005SC , OM6027SC , EMB04N03H , OM6101ST , OM6104ST , OM6105SC , OM6106SC , P50B4EA , P50B6EA , P55NF06 , P5N50C .