All MOSFET. OM60N10SC Datasheet

 

OM60N10SC MOSFET. Datasheet pdf. Equivalent

Type Designator: OM60N10SC

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 120 nC

Rise Time (tr): 270 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO-258AA

OM60N10SC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OM60N10SC Datasheet (PDF)

1.1. om60n10sc.pdf Size:56K _update_mosfet

OM60N10SC
OM60N10SC

OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • Isolated Hermetic Metal Packages • Ultra Low RDS(on) • Low Conductive Loss/Low Gate Charge • Available Screened To MIL-S-19500, TX, TXV And

5.1. om60n06sa.pdf Size:61K _omnirel

OM60N10SC
OM60N10SC

OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthr

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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