All MOSFET. OM60N10SC Datasheet

 

OM60N10SC Datasheet and Replacement


   Type Designator: OM60N10SC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-258AA
 

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OM60N10SC Datasheet (PDF)

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OM60N10SC

OM55N10SC OM60N10SC OM75N05SC OM75N06SCOM55N10SA OM75N05SA OM75N06SALOW VOLTAGE, LOW RDS(on) POWER MOSFETSIN HERMETIC ISOLATED PACKAGE50V, 60V, And 100V Ultra Low RDS(on)Power MOSFETs In TO-254 And TO-258Isolated PackagesFEATURES Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And

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OM60N10SC

OM60N06SA OM60N05SA OM50N06STOM50N06SA OM50N05SA OM50N05STLOW VOLTAGE, LOW RDS(on) POWER MOSFETSIN HERMETIC ISOLATED PACKAGE50V And 60V Ultra Low RDS(on)Power MOSFETs In TO-257 And TO-254Isolated PackagesFEATURES Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ce

Datasheet: NX7002BK , NX7002BKM , NX7002BKMB , NX7002BKS , NX7002BKW , NX7002BKXB , OM6005SC , OM6027SC , 2SK3918 , OM6101ST , OM6104ST , OM6105SC , OM6106SC , P50B4EA , P50B6EA , P55NF06 , P5N50C .

History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I

Keywords - OM60N10SC MOSFET datasheet

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