All MOSFET. PDM6T20V3 Datasheet

 

PDM6T20V3 Datasheet and Replacement


   Type Designator: PDM6T20V3
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23-6L
 

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PDM6T20V3 Datasheet (PDF)

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PDM6T20V3

N-Channel and P-Channel MOSFET PDM6T20V3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF/ON CHARACTERISTICS Drain-Source Breakdown Voltage BV I =250A,V =0V 20 - V DSS D GSZero Gate Voltage Drain Current I V =20V,V =0V - - 1 A DSS DS GSV =0V,V =8V Gate-Body Leakage Current I DS GS - - 100 nA

Datasheet: P50B6EA , P55NF06 , P5N50C , P9B40HP2 , PCP1302 , PCP1402 , PCP1403 , PCP1405 , IRF540 , PDM6UT20V08E , PDNM6T20V7E , PDNM6UT20V05 , PDNM8TP20V6E , PDNM8TP20V7E , PDPM6N20V3 , PH1225AL , PH1330AL .

History: DMP3020LSS | IRF7739L1 | PHB66NQ03LT

Keywords - PDM6T20V3 MOSFET datasheet

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