PDM6T20V3 Datasheet. Specs and Replacement

Type Designator: PDM6T20V3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-23-6L

PDM6T20V3 substitution

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PDM6T20V3 datasheet

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PDM6T20V3

N-Channel and P-Channel MOSFET PDM6T20V3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF/ON CHARACTERISTICS Drain-Source Breakdown Voltage BV I =250 A,V =0V 20 - V DSS D GS Zero Gate Voltage Drain Current I V =20V,V =0V - - 1 A DSS DS GS V =0V,V = 8V Gate-Body Leakage Current I DS GS - - 100 nA ... See More ⇒

Detailed specifications: P50B6EA, P55NF06, P5N50C, P9B40HP2, PCP1302, PCP1402, PCP1403, PCP1405, IRF540N, PDM6UT20V08E, PDNM6T20V7E, PDNM6UT20V05, PDNM8TP20V6E, PDNM8TP20V7E, PDPM6N20V3, PH1225AL, PH1330AL

Keywords - PDM6T20V3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs