All MOSFET. PDM6UT20V08E Datasheet

 

PDM6UT20V08E Datasheet and Replacement


   Type Designator: PDM6UT20V08E
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT-363
 

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PDM6UT20V08E Datasheet (PDF)

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PDM6UT20V08E

PDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. G2 S2D1 6 5 4 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 0.3@ VGS=4.0V N-Channel 0.6 0.45@ VGS=2.5V 20 0.6@ VGS=1.8V 0.9@ VGS=-4.5V P-Channel 1.2@ VGS=-2.5V -0.8 -20 1.5@ VGS=-1.8V 2 31 S1 G1 D

Datasheet: P55NF06 , P5N50C , P9B40HP2 , PCP1302 , PCP1402 , PCP1403 , PCP1405 , PDM6T20V3 , IRF540N , PDNM6T20V7E , PDNM6UT20V05 , PDNM8TP20V6E , PDNM8TP20V7E , PDPM6N20V3 , PH1225AL , PH1330AL , PH16030L .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - PDM6UT20V08E MOSFET datasheet

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