PDM6UT20V08E Datasheet. Specs and Replacement

Type Designator: PDM6UT20V08E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT-363

PDM6UT20V08E substitution

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PDM6UT20V08E datasheet

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PDM6UT20V08E

PDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. G2 S2 D1 6 5 4 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 0.3@ VGS=4.0V N-Channel 0.6 0.45@ VGS=2.5V 20 0.6@ VGS=1.8V 0.9@ VGS=-4.5V P-Channel 1.2@ VGS=-2.5V -0.8 -20 1.5@ VGS=-1.8V 2 3 1 S1 G1 D... See More ⇒

Detailed specifications: P55NF06, P5N50C, P9B40HP2, PCP1302, PCP1402, PCP1403, PCP1405, PDM6T20V3, IRF540, PDNM6T20V7E, PDNM6UT20V05, PDNM8TP20V6E, PDNM8TP20V7E, PDPM6N20V3, PH1225AL, PH1330AL, PH16030L

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