PDNM8TP20V7E Datasheet. Specs and Replacement

Type Designator: PDNM8TP20V7E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 448 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSSOP-8

PDNM8TP20V7E substitution

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PDNM8TP20V7E datasheet

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 pdnm8tp20v7e.pdf pdf_icon

PDNM8TP20V7E

PDNM8TP20V7E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) 20 16@ VGS=4.5V 7 Internal Structure Top View(TSSOP-8) D1(D2) D1(D2) D1(D2) 8 1 S1 S2 7 2 6 S2 G1 G2 S1 3 4 G1 5 G2 S1 S2 Absolute maximum rating@25 ... See More ⇒

 4.1. Size:123K  prisemi
 pdnm8tp20v6e.pdf pdf_icon

PDNM8TP20V7E

PDNM8TP20V6E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) 20 19@ VGS=4.5V 6 Internal Structure Top View(TSSOP-8) D1(D2) D1(D2) D1(D2) 8 1 S1 S2 7 2 6 S2 G1 G2 S1 3 4 G1 5 G2 S1 S2 Absolute maximum rating@25 ... See More ⇒

Detailed specifications: PCP1402, PCP1403, PCP1405, PDM6T20V3, PDM6UT20V08E, PDNM6T20V7E, PDNM6UT20V05, PDNM8TP20V6E, IRF640, PDPM6N20V3, PH1225AL, PH1330AL, PH16030L, PH1730AL, PH1825AL, PH1875L, PH1930AL

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