All MOSFET. PDNM8TP20V7E Datasheet

 

PDNM8TP20V7E Datasheet and Replacement


   Type Designator: PDNM8TP20V7E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 448 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8
 

 PDNM8TP20V7E substitution

   - MOSFET ⓘ Cross-Reference Search

 

PDNM8TP20V7E Datasheet (PDF)

 ..1. Size:122K  prisemi
 pdnm8tp20v7e.pdf pdf_icon

PDNM8TP20V7E

PDNM8TP20V7E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 20 16@ VGS=4.5V 7Internal Structure Top View(TSSOP-8) D1(D2) D1(D2)D1(D2) 8 1 S1 S2 7 2 6 S2 G1 G2 S1 3 4 G1 5 G2 S1 S2 Absolute maximum rating@25

 4.1. Size:123K  prisemi
 pdnm8tp20v6e.pdf pdf_icon

PDNM8TP20V7E

PDNM8TP20V6E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 20 19@ VGS=4.5V 6Internal Structure Top View(TSSOP-8) D1(D2) D1(D2)D1(D2) 8 1 S1 S2 7 2 6 S2 G1 G2 S1 3 4 G1 5 G2 S1 S2 Absolute maximum rating@25

Datasheet: PCP1402 , PCP1403 , PCP1405 , PDM6T20V3 , PDM6UT20V08E , PDNM6T20V7E , PDNM6UT20V05 , PDNM8TP20V6E , IRFP460 , PDPM6N20V3 , PH1225AL , PH1330AL , PH16030L , PH1730AL , PH1825AL , PH1875L , PH1930AL .

History: HUFA76629D3ST | KSO200P03S | P1006BT | RQ5E030AJ | OSG65R200FSF-NB | HY1904U | AO7600

Keywords - PDNM8TP20V7E MOSFET datasheet

 PDNM8TP20V7E cross reference
 PDNM8TP20V7E equivalent finder
 PDNM8TP20V7E lookup
 PDNM8TP20V7E substitution
 PDNM8TP20V7E replacement

 

 
Back to Top

 


 
.