PDPM6N20V3 Datasheet. Specs and Replacement

Type Designator: PDPM6N20V3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: DFN2X2-6L

PDPM6N20V3 substitution

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PDPM6N20V3 datasheet

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PDPM6N20V3

PDPM6N20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(m ) ID(A) -20 110 @ VGS=-4.5V -3 Bottom View Internal structure 1 6 S1 D1 6 1 S1 D1 D1 2 5 G1 G2 5 G2 2 G1 D2 D2 3 4 S2 4 3 ... See More ⇒

Detailed specifications: PCP1403, PCP1405, PDM6T20V3, PDM6UT20V08E, PDNM6T20V7E, PDNM6UT20V05, PDNM8TP20V6E, PDNM8TP20V7E, IRF1404, PH1225AL, PH1330AL, PH16030L, PH1730AL, PH1825AL, PH1875L, PH1930AL, PH1955L

Keywords - PDPM6N20V3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.