All MOSFET. PDPM6N20V3 Datasheet

 

PDPM6N20V3 Datasheet and Replacement


   Type Designator: PDPM6N20V3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: DFN2X2-6L
 

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PDPM6N20V3 Datasheet (PDF)

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PDPM6N20V3

PDPM6N20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) -20 110 @ VGS=-4.5V -3Bottom View Internal structure 1 6 S1D16 1 S1D1D12 5 G1G25G2 2 G1D2D2 3 4 S24 3

Datasheet: PCP1403 , PCP1405 , PDM6T20V3 , PDM6UT20V08E , PDNM6T20V7E , PDNM6UT20V05 , PDNM8TP20V6E , PDNM8TP20V7E , IRF1404 , PH1225AL , PH1330AL , PH16030L , PH1730AL , PH1825AL , PH1875L , PH1930AL , PH1955L .

History: PH1330AL | HYG018N10NS1B6 | RF1S630SM | PHD98N03LT | RF1S9540SM | 2N7002PT

Keywords - PDPM6N20V3 MOSFET datasheet

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