PH2525L MOSFET. Datasheet pdf. Equivalent
Type Designator: PH2525L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34.7 nC
trⓘ - Rise Time: 92 nS
Cossⓘ - Output Capacitance: 1070 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: LFPAK
PH2525L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PH2525L Datasheet (PDF)
ph2525l.pdf
PH2525LN-channel TrenchMOS logic level FETRev. 02 5 December 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Lead-free package Optimized for use in DC-to-DC Very low switching and conductionconverters losse
ph2520u.pdf
PH2520UN-channel TrenchMOS ultra low level FETRev. 03 2 March 2009 Product data sheet1. Product profile1.1 General descriptionUltra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQB7P20TMF085
History: FQB7P20TMF085
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