All MOSFET. PH2625L Datasheet

 

PH2625L MOSFET. Datasheet pdf. Equivalent

Type Designator: PH2625L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 32 nC

Rise Time (tr): 52 nS

Drain-Source Capacitance (Cd): 1137 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0028 Ohm

Package: LFPAK

PH2625L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH2625L Datasheet (PDF)

1.1. ph2625l.pdf Size:213K _update_mosfet

PH2625L
PH2625L

PH2625L N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK Rev. 3 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOSTM technology 1.2 Features and benefits  Low thermal resistance  Optimized for use in DC-to-DC converters  Low threshold

1.2. ph2625l.pdf Size:100K _philips

PH2625L
PH2625L

PH2625L N-channel TrenchMOS logic level FET Rev. 02 24 February 2005 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Optimized for use in DC-to-DC Very low switching and conduction converters losses Low threshold voltage Low thermal re

 

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