All MOSFET. PH3430AL Datasheet

 

PH3430AL Datasheet and Replacement


   Type Designator: PH3430AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 532 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: LFPAK
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PH3430AL Datasheet (PDF)

 ..1. Size:236K  nxp
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PH3430AL

PH3430ALN-channel TrenchMOS logic level FETRev. 05 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

 8.1. Size:36K  sanyo
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PH3430AL

Ordering number : ENN8175CPH3430N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3430ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 2 AD

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History: VBNC1303 | IRFS4010PBF

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