All MOSFET. PH3430AL Datasheet


PH3430AL MOSFET. Datasheet pdf. Equivalent

Type Designator: PH3430AL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 19 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 532 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm

Package: LFPAK

PH3430AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search


PH3430AL Datasheet (PDF)

1.1. ph3430al.pdf Size:236K _update_mosfet


PH3430AL N-channel TrenchMOS logic level FET Rev. 05 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

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