PH4840S Datasheet and Replacement
Type Designator: PH4840S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 94.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 877 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: LFPAK
PH4840S substitution
PH4840S Datasheet (PDF)
ph4840s.pdf

PH4840SN-channel TrenchMOS intermediate level FETRev. 02 6 November 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Low thermal resistance SO8 equivalent area footprint Low threshold voltage Low on-state resistance1.3 Applications DC-to-D
ph4840s.pdf

PH4840SN-channel TrenchMOS intermediate level FETRev. 02 6 November 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Low thermal resistance SO8 equivalent area footprint Low threshold voltage Low on-state resistance1.3 Applications DC-to-D
Datasheet: PH3430AL , PH3830L , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , 5N60 , PH5030AL , PH5330E , PH5525L , PH6030AL , PH6030L , PH6325L , PH7030AL , PH7030L .
History: FQI9N50CTU | HTD200P03 | QM14N65F | TSM2312CX | 2N7002NXBK | BSC050N03MS | 7N65L-TM3-T
Keywords - PH4840S MOSFET datasheet
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History: FQI9N50CTU | HTD200P03 | QM14N65F | TSM2312CX | 2N7002NXBK | BSC050N03MS | 7N65L-TM3-T



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