PH4840S Specs and Replacement

Type Designator: PH4840S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 877 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: LFPAK

PH4840S substitution

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PH4840S datasheet

 ..1. Size:106K  philips
 ph4840s.pdf pdf_icon

PH4840S

PH4840S N-channel TrenchMOS intermediate level FET Rev. 02 6 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Low thermal resistance SO8 equivalent area footprint Low threshold voltage Low on-state resistance 1.3 Applications DC-to-D... See More ⇒

 ..2. Size:106K  nxp
 ph4840s.pdf pdf_icon

PH4840S

PH4840S N-channel TrenchMOS intermediate level FET Rev. 02 6 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Low thermal resistance SO8 equivalent area footprint Low threshold voltage Low on-state resistance 1.3 Applications DC-to-D... See More ⇒

Detailed specifications: PH3430AL, PH3830L, PH3855L, PH4025L, PH4030AL, PH4330L, PH4530L, PH4830L, IRLB4132, PH5030AL, PH5330E, PH5525L, PH6030AL, PH6030L, PH6325L, PH7030AL, PH7030L

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