All MOSFET. PH5330E Datasheet

 

PH5330E Datasheet and Replacement


   Type Designator: PH5330E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 732 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: LFPAK
 

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PH5330E Datasheet (PDF)

 ..1. Size:205K  philips
 ph5330e.pdf pdf_icon

PH5330E

PH5330EN-channel TrenchMOS logic level FETRev. 02 19 October 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features an

 ..2. Size:205K  nxp
 ph5330e.pdf pdf_icon

PH5330E

PH5330EN-channel TrenchMOS logic level FETRev. 02 19 October 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features an

Datasheet: PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , PH4840S , PH5030AL , SPP20N60C3 , PH5525L , PH6030AL , PH6030L , PH6325L , PH7030AL , PH7030L , PH8030L , PH8230E .

History: IPP114N03LG | TPB60R580C

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