PH5330E Specs and Replacement

Type Designator: PH5330E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 732 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: LFPAK

PH5330E substitution

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PH5330E datasheet

 ..1. Size:205K  philips
 ph5330e.pdf pdf_icon

PH5330E

PH5330E N-channel TrenchMOS logic level FET Rev. 02 19 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an... See More ⇒

 ..2. Size:205K  nxp
 ph5330e.pdf pdf_icon

PH5330E

PH5330E N-channel TrenchMOS logic level FET Rev. 02 19 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an... See More ⇒

Detailed specifications: PH3855L, PH4025L, PH4030AL, PH4330L, PH4530L, PH4830L, PH4840S, PH5030AL, K3569, PH5525L, PH6030AL, PH6030L, PH6325L, PH7030AL, PH7030L, PH8030L, PH8230E

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs