All MOSFET. PH6325L Datasheet

 

PH6325L Datasheet and Replacement


   Type Designator: PH6325L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 78.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 517 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: LFPAK
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PH6325L Datasheet (PDF)

 ..1. Size:138K  philips
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PH6325L

PH6325LN-channel TrenchMOS logic level FETM3D748 Rev. 01 28 April 2004 Preliminary data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Optimized for use in DC-to-DC Very low switching and conductionconverters losses Low threshold voltage Low thermal resistanc

 ..2. Size:213K  nxp
 ph6325l.pdf pdf_icon

PH6325L

PH6325LN-channel 25 V 6.3 m logic level MOSFET in LFPAKRev. 2 22 December 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology1.2 Features and benefits Low thermal resistance Optimized for use in DC-to-DC converters Low threshold voltag

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPW50R250CP | TSM4424CS | LKK47-06C5 | APT10050B2LC | PSA10N60C | BRCS200P03DP | IRFB3004GPBF

Keywords - PH6325L MOSFET datasheet

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