All MOSFET. PH6325L Datasheet

 

PH6325L MOSFET. Datasheet pdf. Equivalent


   Type Designator: PH6325L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 78.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.3 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 517 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: LFPAK

 PH6325L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH6325L Datasheet (PDF)

 ..1. Size:138K  philips
 ph6325l.pdf

PH6325L PH6325L

PH6325LN-channel TrenchMOS logic level FETM3D748 Rev. 01 28 April 2004 Preliminary data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Optimized for use in DC-to-DC Very low switching and conductionconverters losses Low threshold voltage Low thermal resistanc

 ..2. Size:213K  nxp
 ph6325l.pdf

PH6325L PH6325L

PH6325LN-channel 25 V 6.3 m logic level MOSFET in LFPAKRev. 2 22 December 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology1.2 Features and benefits Low thermal resistance Optimized for use in DC-to-DC converters Low threshold voltag

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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