All MOSFET. PH6325L Datasheet

 

PH6325L Datasheet and Replacement


   Type Designator: PH6325L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 517 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: LFPAK
 

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PH6325L Datasheet (PDF)

 ..1. Size:138K  philips
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PH6325L

PH6325LN-channel TrenchMOS logic level FETM3D748 Rev. 01 28 April 2004 Preliminary data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Optimized for use in DC-to-DC Very low switching and conductionconverters losses Low threshold voltage Low thermal resistanc

 ..2. Size:213K  nxp
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PH6325L

PH6325LN-channel 25 V 6.3 m logic level MOSFET in LFPAKRev. 2 22 December 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology1.2 Features and benefits Low thermal resistance Optimized for use in DC-to-DC converters Low threshold voltag

Datasheet: PH4530L , PH4830L , PH4840S , PH5030AL , PH5330E , PH5525L , PH6030AL , PH6030L , IRF9540N , PH7030AL , PH7030L , PH8030L , PH8230E , PH9025L , PH9030AL , PH9030L , PH955L .

History: AOB254L | OSG60R600DMZF | PP1410AD | IPP110N20N3G | AOB20S60 | AOTL66912Q | AP86T02GJ-HF

Keywords - PH6325L MOSFET datasheet

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