PH8030L Specs and Replacement

Type Designator: PH8030L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: LFPAK

PH8030L substitution

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PH8030L datasheet

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PH8030L

PH8030L N-channel TrenchMOS logic level FET Rev. 01 6 February 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Optimized for use in DC-to-DC Very low switching and conduction converters losses Logic level compatible Lead-free packa... See More ⇒

Detailed specifications: PH5030AL, PH5330E, PH5525L, PH6030AL, PH6030L, PH6325L, PH7030AL, PH7030L, AON7410, PH8230E, PH9025L, PH9030AL, PH9030L, PH955L, PH9930L, PHK4NQ10T, PHK4NQ20T

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