All MOSFET. PH8030L Datasheet

 

PH8030L Datasheet and Replacement


   Type Designator: PH8030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 76.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: LFPAK
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PH8030L Datasheet (PDF)

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PH8030L

PH8030LN-channel TrenchMOS logic level FETRev. 01 6 February 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Optimized for use in DC-to-DC Very low switching and conductionconverters losses Logic level compatible Lead-free packa

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History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

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