PH8230E Datasheet and Replacement
Type Designator: PH8230E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 67 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 527 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: LFPAK
PH8230E substitution
PH8230E Datasheet (PDF)
ph8230e.pdf
PH8230EN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
ph8230e.pdf
PH8230EN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
Datasheet: PH5330E , PH5525L , PH6030AL , PH6030L , PH6325L , PH7030AL , PH7030L , PH8030L , 4N60 , PH9025L , PH9030AL , PH9030L , PH955L , PH9930L , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T .
Keywords - PH8230E MOSFET datasheet
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History: DH400P06E | NDP7060
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