PH8230E Specs and Replacement

Type Designator: PH8230E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 527 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: LFPAK

PH8230E substitution

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PH8230E datasheet

 ..1. Size:176K  philips
 ph8230e.pdf pdf_icon

PH8230E

PH8230E N-channel TrenchMOS logic level FET Rev. 04 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒

 ..2. Size:176K  nxp
 ph8230e.pdf pdf_icon

PH8230E

PH8230E N-channel TrenchMOS logic level FET Rev. 04 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒

Detailed specifications: PH5330E, PH5525L, PH6030AL, PH6030L, PH6325L, PH7030AL, PH7030L, PH8030L, 12N60, PH9025L, PH9030AL, PH9030L, PH955L, PH9930L, PHK4NQ10T, PHK4NQ20T, PHM12NQ20T

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs