All MOSFET. PH8230E Datasheet

 

PH8230E Datasheet and Replacement


   Type Designator: PH8230E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 67 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 527 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: LFPAK
 

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PH8230E Datasheet (PDF)

 ..1. Size:176K  philips
 ph8230e.pdf pdf_icon

PH8230E

PH8230EN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

 ..2. Size:176K  nxp
 ph8230e.pdf pdf_icon

PH8230E

PH8230EN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

Datasheet: PH5330E , PH5525L , PH6030AL , PH6030L , PH6325L , PH7030AL , PH7030L , PH8030L , 4N60 , PH9025L , PH9030AL , PH9030L , PH955L , PH9930L , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T .

History: BLP10N20J-P | GSM1032

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