All MOSFET. PHK4NQ10T Datasheet

 

PHK4NQ10T Datasheet and Replacement


   Type Designator: PHK4NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SO-8
 

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PHK4NQ10T Datasheet (PDF)

 ..1. Size:84K  philips
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PHK4NQ10T

Philips Semiconductors Product specification N-channel TrenchMOSTM transistor PHK4NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Low on-state resistance d Fast switching VDS = 100 V Low profile surface mountpackage ID = 4 AgRDS(ON) 70 m (VGS = 10 V)sGENERAL DESCRIPTION PINNING SOT96-1 (SO8)8 7 6 5N-channel enhancement mode PIN DESCRIPTIONfield-effect transi

 8.1. Size:233K  philips
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PHK4NQ10T

PHK4NQ20TTrenchMOS standard level FETM3D315Rev. 01 20 January 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHK4NQ20T in SOT96-1 (SO8).1.2 Features Low on-state resistance Surface mount package.1.3 Applications DC-DC primary side switch

Datasheet: PH7030L , PH8030L , PH8230E , PH9025L , PH9030AL , PH9030L , PH955L , PH9930L , IRLB4132 , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T .

History: AON6444 | RJK2511DPK | AP3A010MT | BUK9620-55A | IXTK17N120L | IRF7853PBF | SLP60R380S2

Keywords - PHK4NQ10T MOSFET datasheet

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