PHM12NQ20T Specs and Replacement
Type Designator: PHM12NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: QLPAK
PHM12NQ20T substitution
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PHM12NQ20T datasheet
phm12nq20t.pdf
PHM12NQ20T TrenchMOS standard level FET Rev. 01 30 January 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHM12NQ20T in SOT685-1 (QLPAK). 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.... See More ⇒
Detailed specifications: PH8230E, PH9025L, PH9030AL, PH9030L, PH955L, PH9930L, PHK4NQ10T, PHK4NQ20T, AON7506, PHM15NQ20T, PHM18NQ15T, PHM21NQ15T, PHM25NQ10T, PHM30NQ10T, PHT2NQ10T, PI5101-00-LGIZ, PJ2301
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