PHM12NQ20T MOSFET. Datasheet pdf. Equivalent
Type Designator: PHM12NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: QLPAK
PHM12NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHM12NQ20T Datasheet (PDF)
..1. Size:236K philips
phm12nq20t.pdf
phm12nq20t.pdf
PHM12NQ20TTrenchMOS standard level FETRev. 01 30 January 2003 Preliminary data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHM12NQ20T in SOT685-1 (QLPAK).1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.
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