All MOSFET. PHM12NQ20T Datasheet

 

PHM12NQ20T Datasheet and Replacement


   Type Designator: PHM12NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.2 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: QLPAK
 

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PHM12NQ20T Datasheet (PDF)

 ..1. Size:236K  philips
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PHM12NQ20T

PHM12NQ20TTrenchMOS standard level FETRev. 01 30 January 2003 Preliminary data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHM12NQ20T in SOT685-1 (QLPAK).1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.

Datasheet: PH8230E , PH9025L , PH9030AL , PH9030L , PH955L , PH9930L , PHK4NQ10T , PHK4NQ20T , IRFP250 , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 .

History: SFF20N60N | SI1428EDH | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

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