PHM15NQ20T Datasheet and Replacement
Type Designator: PHM15NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: QLPAK
PHM15NQ20T substitution
PHM15NQ20T Datasheet (PDF)
phm15nq20t.pdf

PHM15NQ20TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta
Datasheet: PH9025L , PH9030AL , PH9030L , PH955L , PH9930L , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , 20N50 , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , PJ2306 .
History: RU1088R | ME4413D-G | AP3A010MT | AT12N65S | KI2323DS
Keywords - PHM15NQ20T MOSFET datasheet
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History: RU1088R | ME4413D-G | AP3A010MT | AT12N65S | KI2323DS



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