All MOSFET. PHM25NQ10T Datasheet

 

 

PHM25NQ10T Datasheet and Replacement


   Type Designator: PHM25NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: QLPAK
 

 PHM25NQ10T substitution

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PHM25NQ10T Datasheet (PDF)

 ..1. Size:277K  philips
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PHM25NQ10T

PHM25NQ10TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

Datasheet: PH955L , PH9930L , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , AO4407 , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 .

History: NCE65T130T

Keywords - PHM25NQ10T MOSFET datasheet

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