PHM25NQ10T Datasheet and Replacement
Type Designator: PHM25NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 275 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: QLPAK
PHM25NQ10T substitution
PHM25NQ10T Datasheet (PDF)
phm25nq10t.pdf

PHM25NQ10TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta
Datasheet: PH955L , PH9930L , PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , P60NF06 , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 .
History: AON6484 | 2SJ477-01MR | DMP2004DMK | ME2307-G | IXFC60N20 | AON6514 | PCP1302
Keywords - PHM25NQ10T MOSFET datasheet
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History: AON6484 | 2SJ477-01MR | DMP2004DMK | ME2307-G | IXFC60N20 | AON6514 | PCP1302



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