All MOSFET. PHT2NQ10T Datasheet

 

PHT2NQ10T Datasheet and Replacement


   Type Designator: PHT2NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.7 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: SOT-223
 

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PHT2NQ10T Datasheet (PDF)

 ..1. Size:269K  philips
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PHT2NQ10T

PHT2NQ10TN-channel TrenchMOS transistorRev. 01 16 October 2001 Product dataM3D0871. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHT2NQ10T in SOT2232. Features TrenchMOS technology Fast switching Surface mount package.3. Applications Primary side switch in DC to DC convert

Datasheet: PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , 2SK3568 , PI5101-00-LGIZ , PJ2301 , PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 .

History: FRK9150D | DMN3016LDN | IRF3704ZCLPBF | IRF3704ZSPBF | IPI80N04S3-H4 | 8N60G-TF3-T

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