PHT2NQ10T Specs and Replacement

Type Designator: PHT2NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: SOT-223

PHT2NQ10T substitution

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PHT2NQ10T datasheet

 ..1. Size:269K  philips
 pht2nq10t.pdf pdf_icon

PHT2NQ10T

PHT2NQ10T N-channel TrenchMOS transistor Rev. 01 16 October 2001 Product data M3D087 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHT2NQ10T in SOT223 2. Features TrenchMOS technology Fast switching Surface mount package. 3. Applications Primary side switch in DC to DC convert... See More ⇒

Detailed specifications: PHK4NQ10T, PHK4NQ20T, PHM12NQ20T, PHM15NQ20T, PHM18NQ15T, PHM21NQ15T, PHM25NQ10T, PHM30NQ10T, 4N60, PI5101-00-LGIZ, PJ2301, PJ2306, PJ4N3KDW, QH8KA1, QH8KA2, QH8MA2, QH8MA3

Keywords - PHT2NQ10T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.