PHT2NQ10T Datasheet and Replacement
Type Designator: PHT2NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.7 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: SOT-223
PHT2NQ10T substitution
PHT2NQ10T Datasheet (PDF)
pht2nq10t.pdf

PHT2NQ10TN-channel TrenchMOS transistorRev. 01 16 October 2001 Product dataM3D0871. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHT2NQ10T in SOT2232. Features TrenchMOS technology Fast switching Surface mount package.3. Applications Primary side switch in DC to DC convert
Datasheet: PHK4NQ10T , PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , 10N65 , PI5101-00-LGIZ , PJ2301 , PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 .
History: SVGP20110NSTR
Keywords - PHT2NQ10T MOSFET datasheet
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History: SVGP20110NSTR



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