All MOSFET. PI5101-00-LGIZ Datasheet

 

 

PI5101-00-LGIZ Datasheet and Replacement


   Type Designator: PI5101-00-LGIZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 5 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 5200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00045 Ohm
   Package: CHIP
 

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PI5101-00-LGIZ Datasheet (PDF)

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PI5101-00-LGIZ

PI5101 RDS(on) FETTM Series 360, 5V/60A N-Channel MOSFET Product Summary Features Symbol Condition Value Ultra Low micro-Ohm RDS(on) ID TA = 25C 60ADC Max Extremely Low Gate Charge V(BR)DSS ID = 5mA 5V Min Very Low Gate Resistance VGS = 4.5V 360 Typ High Density, Low Profile RDS(on) VGS = 3.5V 380 Typ Very Low Package Inducta

Datasheet: PHK4NQ20T , PHM12NQ20T , PHM15NQ20T , PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , IRFP250 , PJ2301 , PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 .

History: NCE65T130T

Keywords - PI5101-00-LGIZ MOSFET datasheet

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