PI5101-00-LGIZ Specs and Replacement

Type Designator: PI5101-00-LGIZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 5 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 5200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00045 Ohm

Package: CHIP

PI5101-00-LGIZ substitution

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PI5101-00-LGIZ datasheet

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 pi5101-00-lgiz.pdf pdf_icon

PI5101-00-LGIZ

PI5101 RDS(on) FETTM Series 360 , 5V/60A N-Channel MOSFET Product Summary Features Symbol Condition Value Ultra Low micro-Ohm RDS(on) ID TA = 25 C 60ADC Max Extremely Low Gate Charge V(BR)DSS ID = 5mA 5V Min Very Low Gate Resistance VGS = 4.5V 360 Typ High Density, Low Profile RDS(on) VGS = 3.5V 380 Typ Very Low Package Inducta... See More ⇒

Detailed specifications: PHK4NQ20T, PHM12NQ20T, PHM15NQ20T, PHM18NQ15T, PHM21NQ15T, PHM25NQ10T, PHM30NQ10T, PHT2NQ10T, IRFP250, PJ2301, PJ2306, PJ4N3KDW, QH8KA1, QH8KA2, QH8MA2, QH8MA3, QH8MA4

Keywords - PI5101-00-LGIZ MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.