All MOSFET. PJ2301 Datasheet

 

PJ2301 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PJ2301
   Marking Code: *01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 1.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOT-23

 PJ2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJ2301 Datasheet (PDF)

 ..1. Size:290K  panjit
 pj2301.pdf

PJ2301 PJ2301

PJ230120V P-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@-1.8V,ID@-1.5A=200m RDS(ON), VGS@-4.5V,ID@-2.2A=105m0.120(3.04) Advanced Trench Process Technology0.110(2.80) High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC converters Low gate charge 0.056(1

 0.1. Size:380K  panjit
 pj2301-au.pdf

PJ2301 PJ2301

PPJ2301-AU 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A

 9.1. Size:214K  panjit
 pj2306.pdf

PJ2301 PJ2301

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD ProtectedUnitinch(mm)SOT-23FEATURES RDS(ON), VGS@10V,IDS@3.2A=65m RDS(ON), VGS@4.5V,IDS@2.8A=85m0.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Load Switch, PWM Applic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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