PJ2301 Specs and Replacement

Type Designator: PJ2301

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SOT-23

PJ2301 substitution

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PJ2301 datasheet

 ..1. Size:290K  panjit
pj2301.pdf pdf_icon

PJ2301

PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@-1.8V,ID@-1.5A=200m RDS(ON), VGS@-4.5V,ID@-2.2A=105m 0.120(3.04) Advanced Trench Process Technology 0.110(2.80) High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC converters Low gate charge 0.056(1... See More ⇒

 0.1. Size:380K  panjit
pj2301-au.pdf pdf_icon

PJ2301

PPJ2301-AU 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A... See More ⇒

 9.1. Size:214K  panjit
pj2306.pdf pdf_icon

PJ2301

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected Unit inch(mm) SOT-23 FEATURES RDS(ON), VGS@10V,IDS@3.2A=65m RDS(ON), VGS@4.5V,IDS@2.8A=85m 0.120(3.04) 0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Load Switch, PWM Applic... See More ⇒

Detailed specifications: PHM12NQ20T, PHM15NQ20T, PHM18NQ15T, PHM21NQ15T, PHM25NQ10T, PHM30NQ10T, PHT2NQ10T, PI5101-00-LGIZ, IRF1407, PJ2306, PJ4N3KDW, QH8KA1, QH8KA2, QH8MA2, QH8MA3, QH8MA4, QJD1210006

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