PJ4N3KDW Specs and Replacement
Type Designator: PJ4N3KDW
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT-363
PJ4N3KDW substitution
- MOSFET ⓘ Cross-Reference Search
PJ4N3KDW datasheet
pj4n3kdw.pdf
PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@2.5V,IDS@1mA=7.0 RDS(ON), VGS@4.0V,IDS@10mA=5.0 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance The MOSFET elements are independent,eliminating interference Mounting cost and area can be cut in half Very Low Leakage Current ... See More ⇒
Detailed specifications: PHM18NQ15T, PHM21NQ15T, PHM25NQ10T, PHM30NQ10T, PHT2NQ10T, PI5101-00-LGIZ, PJ2301, PJ2306, 10N65, QH8KA1, QH8KA2, QH8MA2, QH8MA3, QH8MA4, QJD1210006, QJD1210007, QJD1210010
Keywords - PJ4N3KDW MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
