All MOSFET. PJ4N3KDW Datasheet

 

PJ4N3KDW Datasheet and Replacement


   Type Designator: PJ4N3KDW
   Marking Code: 4N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.8 nC
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT-363
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PJ4N3KDW Datasheet (PDF)

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PJ4N3KDW

PJ4N3KDW30V Dual N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@2.5V,IDS@1mA=7.0 RDS(ON), VGS@4.0V,IDS@10mA=5.0 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance The MOSFET elements are independent,eliminating interference Mounting cost and area can be cut in half Very Low Leakage Current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT8030JVFR | IRF6721S | IRF7703GPBF

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