All MOSFET. PJ4N3KDW Datasheet

 

PJ4N3KDW Datasheet and Replacement


   Type Designator: PJ4N3KDW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT-363
 

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PJ4N3KDW Datasheet (PDF)

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PJ4N3KDW

PJ4N3KDW30V Dual N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@2.5V,IDS@1mA=7.0 RDS(ON), VGS@4.0V,IDS@10mA=5.0 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance The MOSFET elements are independent,eliminating interference Mounting cost and area can be cut in half Very Low Leakage Current

Datasheet: PHM18NQ15T , PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , PJ2306 , STP80NF70 , QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 , QJD1210006 , QJD1210007 , QJD1210010 .

History: TPU60R1K4M | SSF2341E | STD35NF3LLT4 | IXTT140N10P | HM70N80 | STW7NA80 | ZXMP4A57E6TA

Keywords - PJ4N3KDW MOSFET datasheet

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