All MOSFET. QH8KA1 Datasheet

 

QH8KA1 Datasheet and Replacement


   Type Designator: QH8KA1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm
   Package: TSMT8
 

 QH8KA1 substitution

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QH8KA1 Datasheet (PDF)

 ..1. Size:2924K  rohm
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QH8KA1

QH8KA1Datasheet30V Nch+Nch Power MOSFETlOutlinel TSMT8VDSS 30VRDS(on)(Max.) 73m ID 4.5A PD 2.4W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagin

 9.1. Size:2492K  rohm
 qh8ka2.pdf pdf_icon

QH8KA1

QH8KA2Datasheet30V Nch+Nch Power MOSFETlOutlinel TSMT8VDSS30VRDS(on)(Max.) 35m ID 4.5A PD1.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackag

Datasheet: PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , PJ2306 , PJ4N3KDW , 10N65 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 , QJD1210006 , QJD1210007 , QJD1210010 , QJD1210011 .

History: IRF640FI | FDA50N50

Keywords - QH8KA1 MOSFET datasheet

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