QH8KA1 Specs and Replacement
Type Designator: QH8KA1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm
Package: TSMT8
QH8KA1 substitution
- MOSFET ⓘ Cross-Reference Search
QH8KA1 datasheet
qh8ka1.pdf
QH8KA1 Datasheet 30V Nch+Nch Power MOSFET lOutline l TSMT8 VDSS 30V RDS(on)(Max.) 73m ID 4.5A PD 2.4W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagin... See More ⇒
qh8ka2.pdf
QH8KA2 Datasheet 30V Nch+Nch Power MOSFET lOutline l TSMT8 VDSS 30V RDS(on)(Max.) 35m ID 4.5A PD 1.5W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackag... See More ⇒
Detailed specifications: PHM21NQ15T , PHM25NQ10T , PHM30NQ10T , PHT2NQ10T , PI5101-00-LGIZ , PJ2301 , PJ2306 , PJ4N3KDW , 5N60 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 , QJD1210006 , QJD1210007 , QJD1210010 , QJD1210011 .
Keywords - QH8KA1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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