All MOSFET. QM02N65D Datasheet

 

QM02N65D Datasheet and Replacement


   Type Designator: QM02N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.4 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-252
 

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QM02N65D Datasheet (PDF)

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QM02N65D

QM02N65D 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM02N65D is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 8 2Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM02N65D meet

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QM02N65D

QM02N65U 1 2010-04-27 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM02N65U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 8 2Afor most of the synchronous buck converter applications . Applications The QM02N65U meet the RoHS

Datasheet: QM0016P , QM0016S , QM0018AD , QM0020AP , QM0020P , QM01N65D , QM01N65L , QM01N65U , AO3407 , QM02N65U , QM03N65D , QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 .

History: QM2413V | PSMN3R0-60ES | 2SK3141 | HY3210B | STD7N65M2 | IRLB3036PBF | NTTFS4C25NTAG

Keywords - QM02N65D MOSFET datasheet

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