QM02N65D Datasheet. Specs and Replacement

Type Designator: QM02N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.4 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-252

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QM02N65D datasheet

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QM02N65D

QM02N65D 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 8 2A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM02N65D meet ... See More ⇒

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QM02N65D

QM02N65U 1 2010-04-27 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 8 2A for most of the synchronous buck converter applications . Applications The QM02N65U meet the RoHS ... See More ⇒

Detailed specifications: QM0016P, QM0016S, QM0018AD, QM0020AP, QM0020P, QM01N65D, QM01N65L, QM01N65U, IRF830, QM02N65U, QM03N65D, QM03N65F, QM04N60F, QM04N65B, QM04N65D, QM04N65F, QM04N65F1

Keywords - QM02N65D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.