All MOSFET. QM02N65D Datasheet

 

QM02N65D MOSFET. Datasheet pdf. Equivalent

Type Designator: QM02N65D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8 nC

Rise Time (tr): 18.4 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 8 Ohm

Package: TO-252

QM02N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM02N65D Datasheet (PDF)

0.1. qm02n65d.pdf Size:202K _ubiq

QM02N65D QM02N65D

QM02N65D 機密 第 1 頁 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 8Ω 2A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM02N65D meet

7.1. qm02n65u.pdf Size:340K _ubiq

QM02N65D QM02N65D

QM02N65U 機密 第 1 頁 2010-04-27 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 8Ω 2A for most of the synchronous buck converter applications . Applications The QM02N65U meet the RoHS

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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