QM02N65U PDF Specs and Replacement
Type Designator: QM02N65U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-251
QM02N65U substitution
QM02N65U PDF Specs
qm02n65u.pdf
QM02N65U 1 2010-04-27 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 8 2A for most of the synchronous buck converter applications . Applications The QM02N65U meet the RoHS ... See More ⇒
qm02n65d.pdf
QM02N65D 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 8 2A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM02N65D meet ... See More ⇒
Detailed specifications: QM0016S , QM0018AD , QM0020AP , QM0020P , QM01N65D , QM01N65L , QM01N65U , QM02N65D , 60N06 , QM03N65D , QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 , QM06N65F .
Keywords - QM02N65U MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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