All MOSFET. QM02N65U Datasheet

 

QM02N65U Datasheet and Replacement


   Type Designator: QM02N65U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-251
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QM02N65U Datasheet (PDF)

 ..1. Size:340K  ubiq
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QM02N65U

QM02N65U 1 2010-04-27 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM02N65U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 8 2Afor most of the synchronous buck converter applications . Applications The QM02N65U meet the RoHS

 7.1. Size:202K  ubiq
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QM02N65U

QM02N65D 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM02N65D is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 8 2Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM02N65D meet

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 20N03L-TO252 | 2N6762JTXV

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