All MOSFET. QM06N65F Datasheet

 

QM06N65F Datasheet and Replacement


   Type Designator: QM06N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-220F
 

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QM06N65F Datasheet (PDF)

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QM06N65F

QM06N65F 1 2011-04-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 1.6 6Amost of the synchronous buck converterapplications . Applications The QM06N65F meet the RoHS and

Datasheet: QM02N65U , QM03N65D , QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 , 20N60 , QM07N60F , QM08N60F , QM09N50F , QM09N65B , QM09N65F , QM09N65P , QM10N60F , QM12N50F .

History: STH55N10FI | FXN10N50F | STU10N25 | FMR11N90E | FTK50N06F | IRF9540 | CEF08N8

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