QM06N65F MOSFET Datasheet: N-Ch, 650V, 6A. Full specification with pinout and replacement list

QM06N65F Specs and Replacement

Type Designator: QM06N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.2 nS

Cossⓘ - Output Capacitance: 76 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-220F

QM06N65F substitution

- MOSFET ⓘ Cross-Reference Search

QM06N65F datasheet

..1. Size:350K ubiq
qm06n65f.pdf pdf_icon

QM06N65F 1 2011-04-25 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 1.6 6A most of the synchronous buck converter applications . Applications The QM06N65F meet the RoHS and ... See More ⇒

Detailed specifications: QM02N65U , QM03N65D , QM03N65F , QM04N60F , QM04N65B , QM04N65D , QM04N65F , QM04N65F1 , 20N60 , QM07N60F , QM08N60F , QM09N50F , QM09N65B , QM09N65F , QM09N65P , QM10N60F , QM12N50F .