All MOSFET. QM06N65F Datasheet

 

QM06N65F MOSFET. Datasheet pdf. Equivalent

Type Designator: QM06N65F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27.5 nC

Rise Time (tr): 19.2 nS

Drain-Source Capacitance (Cd): 76 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO-220F

QM06N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM06N65F Datasheet (PDF)

0.1. qm06n65f.pdf Size:350K _ubiq

QM06N65F
QM06N65F

 QM06N65F 機密 第 1 頁 2011-04-25 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 1.6 Ω 6A most of the synchronous buck converter applications . Applications The QM06N65F meet the RoHS and

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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